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Sato, Tatsuhiko; Satoh, Daiki; Endo, Akira
Hoshasen, 32(4), p.233 - 238, 2006/10
no abstracts in English
Sato, Tatsuhiko; Niita, Koji*
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Koike, Masato; Ishino, Masahiko; Sasai, Hiroyuki*
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O formation on Cu(410) using a hyperthermal O molecular beamOkada, Michio*; Vattuone, L.*; Moritani, Kosuke*; Gerbi, A.*; Savio, L.*; Yoshigoe, Akitaka; Teraoka, Yuden; Rocca, M.*; Kasai, Toshio*
no journal, ,
It is important to make clear oxidation processes of Cu from an industrial view point because cupper oxides are candidates of high-Tc super conductor and solar cells. However, the details of the chemical reaction dynamics for the Cu oxidation processes have not been understood yet. We have already studied initial oxidation processes of Cu(100) and Cu(110) surfaces by using supersonic oxygen molecular beams. In this research, effects of surface defects for the surface oxidation are investigated by using the Cu(410) surface with large step density. It was found that oxidation rate of the Cu(410) surface was larger than Cu(100) surface, but, smaller than Cu(110) surface in the oxygen coverage range larger than 0.5 monolayer, from which formation of CuO was observed. The phenomenon can be understood from the fact that the (410) surface consists of (100) terraces and (110) steps.
and metastable oxygen adsorbates on Si(111)-7
7 surface; "
" observation by means of high energy-resolution synchrotron radiation photoelectron spectroscopyYoshigoe, Akitaka; Moritani, Kosuke*; Naruhiro, Eisuke; Teraoka, Yuden
no journal, ,
A metastable oxygen adsorbate which is normally known as a precursor states in dissociative adsorption processes is observed when O is exposed on Si(111)-77 surface even at room temperature. Molecular beam experiments result in that the adsorption dynamics is changed from trapping-mediated adsorption to direct adsorption one at the incident energy of around 0.08eV. In order to clarify the adsorption mechanism in detail, we investigate the incident energy dependence of moleculary adsorption states by using synchrotron radiation photoelectron spectroscopy in conjunction with supersonic molecular beam technique. All experiments were carried out at SUREAC2000 at SPring-8. The incident translational kinetic energy is controlled with a seed beam method combining with the use of a heatable nozzle. The molecular beam is exposed on the sample surface with 10 degrees from surface normal directions at room tmeperature. 
photoelectron spectroscopy measurement for O1s core-level using a photon energy of 680eV was demonstrated under the moleculra beam irradiation. At the incident energy of 0.06eV where the dominant adsorption mechanism is expected to be the trapping-mediated adsorption, the metastable moleculary oxygen adsorbates were clearly observed in high-resolution O1s photoelectron spectroscopy at the dosage of 8.4310
molecules/cm
and then we found that the intensity of that decreased with increasing incident energies.
Yokota, Kumiko*; Asada, Hidetoshi*; Tagawa, Masahito*; Ohara, Hisanori*; Nakahigashi, Takahiro*; Yoshigoe, Akitaka; Teraoka, Yuden; Martin, J. M.*; Belin, M.*
no journal, ,
Hydrogenated diamond-like carbon (DLC) is expected as a lubricant for space uses because of its ultra low friction charactor in vacuum. Thus, DLC films were exposed to atomic oxygens which were generated by a laser detonation method simulating a low orbit space environment. The DLC surfaces were analysed and the results are reported in this talk. The hydrogenated amorphous DLC was fabricated by a RF-CVD method on Si substrates. Relative collision energy of space planes against atomic oxygens can be simulated with the space environment experimental apparatus. The DLC films exposed to atomic oxygens were analysed by an SR-PES method etc. The SR-PES was performed at the surface chemical reaction analysis station installed in the BL23SU of SPring-8. It was suggested that some volatile oxides were formed and desorbed from the DLC surface when DLC surface was irradiated by atomic oxygens with an incident energy of 4.2 eV and fluence of 510
atoms/cm.
Takahashi, Masamitsu; Kaizu, Toshiyuki
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Takahashi, Masamitsu
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2 by real-time photoemission spectroscopy, 1Togashi, Hideaki*; Kato, Atsushi*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka; Narita, Yuzuru*
no journal, ,
Initial oxidation processes of Si(110) surface have not been studied although they are important for the next generation device. Now we observed time evolution of oxygen coverage at the Si(110)-162 surface in the initial oxidation region by using real-time photoemission spectroscopy with synchrotron radiation. As a conclusion, rapid initial oxidation processes, in which several tens per cent of the surface was oxidized just after oxygen exposure, were found in experimental conditions of 813 K and oxygen pressure of 1.110
Pa. Such a rapid initial oxidation process has not been observed in the initial oxidation of Si(100)-21 surface. This phenomenon may be related with adatom clusters, which exist periodically on the Si(110)-162 surface. For example, An adatom cluster, which consists of five Si atoms, shares 0.25 ML on the Si(110)-162 reconstruction surface in the pentagon-pair model. This model consistents with the initial oxygen coverage obtained in this experiment.
2 by real-time photoemission spectroscopy, 2Kato, Atsushi*; Togashi, Hideaki*; Yamamoto, Yoshihisa*; Konno, Atsushi*; Narita, Yuzuru*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka
no journal, ,
Initial oxidation processes of ultra-thin oxide layers on Si(110)-162 surfaces have not been studied yet. Making clear the chemical reaction mechanisms is, however, important for device fabrication. We observed time evolution of oxide coverage on the Si(110)-162 surface at room temperature. The O1s photoemission spectrum increased with increasing oxygen dose and the peak position shifted to higher binding energy side at oxygen pressure of 1.110 Pa. This peak shift is responsible to two kinds of peak components and their independent time evolutions. Time evolution of each component, behaviour of Si2p spectrum, and thermal stability of the surface reveal that the oxidation of Si(110) surface has different characters in compared with that of Si(100) surface. These facts can be understood on the basis of adatom clusters on the Si(110) surface.
Shimada, Yukihiro; Nishimura, Akihiko
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) thin films by high energy heavy ion irradiationSasase, Masato*; Okayasu, Satoru; Yamamoto, Hiroyuki; Yamaguchi, Kenji; Shamoto, Shinichi; Hojo, Kiichi
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In the present study, high energy heavy ions are irradiated to 
-FeSi. Heavy ions produce the structural changes along the projectile. It is expected that phase transition takes place from semiconducting -FeSi to other metallic phase. On the basis of the transmission electron micrograph, columnar defects with 2 nm diameter were observed after 180 MeV, Fe
irradiation.
F
Oba, Hironori; Akagi, Hiroshi; Yokoyama, Atsushi; Yamada, Yoichi; Yamamoto, Hiroyuki
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Nakai, Naofumi*; Chiang, T.-Y.*; Uno, Hidetaka*; Tero, Ryogo*; Suzui, Koichi*; Teraoka, Yuden; Yoshigoe, Akitaka; Makinura, Tetsuya*; Murakami, Koichi*; Urisu, Tsuneo*
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Akahane, Yutaka; Aoyama, Makoto; Tsuji, Koichi; Kawanaka, Junji*; Nishioka, Hajime*; Yamakawa, Koichi
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p diodes irradiated with Au ionsIwamoto, Naoya; Oshima, Takeshi; Sato, Takahiro; Oikawa, Masakazu; Onoda, Shinobu; Hishiki, Shigeomi; Hirao, Toshio; Kamiya, Tomihiro; Yokoyama, Takuro*; Sakamoto, Airi*; et al.
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Miyamoto, Haruki; Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Ito, Hisayoshi; Kawano, Katsuyasu*
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Morioka, Chiharu*; Shimazaki, Kazunori*; Kawakita, Shiro*; Imaizumi, Mitsuru*; Oshima, Takeshi; Ito, Hisayoshi; Kibe, Koichi*
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Nakagawa, Satoko*; Sone, Yoshitsugu*; Tajima, Michio*; Oshima, Takeshi; Ito, Hisayoshi
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Ishino, Masahiko; Koike, Masato; Heimann, P. A.*; Sasai, Hiroyuki*; Hatayama, Masatoshi*; Takenaka, Hisataka*; Sano, Kazuo*; Gullikson, E. M.*
no journal, ,
no abstracts in English